The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Aug. 24, 2016
Myoungsu Son, Seoul, KR;
Kiseok Suh, Hwaseong-si, KR;
Gwanhyeob Koh, Seoul, KR;
Kyungtae Nam, Suwon-si, KR;
Yoonjong Song, Hwaseong-si, KR;
Myoungsu Son, Seoul, KR;
Kiseok Suh, Hwaseong-si, KR;
Gwanhyeob Koh, Seoul, KR;
KyungTae Nam, Suwon-si, KR;
Yoonjong Song, Hwaseong-si, KR;
Abstract
A magnetic memory device and a method for manufacturing the magnetic memory device are disclosed. The method includes forming a first interlayer insulating layer on a substrate, forming a first conductive pattern that penetrates the first interlayer insulating layer, forming a mold insulating layer that includes first and second mold insulating layers on the first interlayer insulating layer, forming a second conductive pattern that penetrates the first and second mold insulating layers and the first interlayer insulating layer, and forming a magnetic tunnel junction pattern on the second conductive pattern. The first mold insulating layer is in contact with the first conductive pattern, and the second mold insulating layer is disposed on the first mold insulating layer.