The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2017

Filed:

Apr. 21, 2016
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Shunqiang Gong, Singapore, SG;

Benfu Lin, Singapore, SG;

Juan Boon Tan, Singapore, SG;

Ramakanth Alapati, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/02 (2006.01); H01L 31/0232 (2014.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02002 (2013.01); H01L 31/02327 (2013.01); H01L 31/18 (2013.01);
Abstract

Integrated circuits and methods of producing such integrated circuits are provided. In an exemplary embodiment, a method of producing an integrated circuit includes forming an upper interlayer dielectric overlying an optical modulator and a photodetector, where the photodetector has a shoulder and a plug. An etch stop is formed overlying the upper interlayer dielectric. The etch stop is a first, second, and third distance from an uppermost surface of the optical modulator, the shoulder, and the plug, respectively, where the first, second, and third distances are all different from each other. A first, second, and third contact are formed through the upper interlayer dielectric, where the first, second and third contacts are in electrical communication with the optical modulator, the shoulder, and the plug, respectively.


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