The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Feb. 15, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A device includes a semiconductor substrate including an active region. The active region includes a first sidewall. An isolation region extends from a top surface of the semiconductor substrate into the semiconductor substrate. The isolation region has a second sidewall, wherein a lower portion of the first sidewall joins a lower portion of the second sidewall to form an interface. A dielectric spacer is disposed on an upper portion of the first sidewall. A silicide region is over and contacting the active region. A sidewall of the silicide region contacts the dielectric spacer, and the dielectric spacer has a top surface substantially lower than a top surface of the silicide region.