The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Dec. 16, 2015
Applicant:
Fuji Electric Co., Ltd., Kanagawa, JP;
Inventor:
Yoshihiro Ikura, Matsumoto, JP;
Assignee:
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/06 (2006.01); H01L 29/739 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 29/0619 (2013.01); H01L 29/402 (2013.01); H01L 29/408 (2013.01); H01L 29/0696 (2013.01); H01L 29/49 (2013.01); H01L 29/511 (2013.01);
Abstract
Provided is a semiconductor device including a plurality of trenches, including an emitter electrode; a floating layer of a first conduction type provided between adjacent trenches; and a low-dielectric-constant film provided between the floating layer and the emitter electrode, in which a dielectric constant of the low-dielectric-constant film is less than 3.9. Also provided is a semiconductor device further including a gate electrode formed in the trenches, in which capacitance between the gate electrode and the floating layer is greater than capacitance between the emitter electrode and the floating layer.