The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Aug. 28, 2015
Applicant:
Massachusetts Institute of Technology, Cambridge, MA (US);
Inventors:
Dong Seup Lee, Farmers Branch, TX (US);
Tomas Apostol Palacios, Belmont, MA (US);
Assignee:
Massachusetts Institute of Technology, Cambridge, MA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); B82Y 10/00 (2011.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); B82Y 10/00 (2013.01); H01L 29/0649 (2013.01); H01L 29/0657 (2013.01); H01L 29/2003 (2013.01); H01L 29/42316 (2013.01); H01L 29/66469 (2013.01); H01L 29/775 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01);
Abstract
A field effect transistor that has a source, a drain, a gate and a semiconductor region. The semiconductor region has a source access region between the gate and the source, a drain access region between the gate and the drain, and a channel region under the gate. The channel region under the gate has a maximum current-carrying capability that is lower than a maximum current-carrying capability of the source access region.