The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Feb. 15, 2012
Hua-chou Tseng, Hsinchu, TW;
Meng-wei Hsieh, Hsinchu, TW;
Hua-Chou Tseng, Hsinchu, TW;
Meng-Wei Hsieh, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A semiconductor device and methods for forming the same are provided. The semiconductor device includes a first doped region and a second, oppositely doped, region both formed in a substrate, a first gate formed overlying a portion of the first doped region and a portion of the second doped region, two or more second gates formed over the substrate overlying a different portion of the second doped region, one or more third doped regions in the second doped region disposed only between the two or more second gates such that the third doped region and the second doped region having opposite conductivity types, a source region in the first doped region, and a drain region in the second doped region disposed across the second gates from the first gate.