The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Sep. 24, 2013
Applicant:
Flosfia Inc., Kyoto-shi, JP;
Inventors:
Assignee:
FLOSFIA, INC., Kyoto, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); C30B 29/22 (2006.01); H01L 21/02 (2006.01); C30B 25/02 (2006.01); C30B 29/20 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/04 (2013.01); C30B 25/02 (2013.01); C30B 29/20 (2013.01); C30B 29/22 (2013.01); H01L 21/0237 (2013.01); H01L 21/0242 (2013.01); H01L 21/0262 (2013.01); H01L 21/02488 (2013.01); H01L 21/02565 (2013.01); H01L 21/02609 (2013.01); H01L 21/02628 (2013.01); H01L 29/24 (2013.01);
Abstract
There is provided a semiconductor device including corundum crystal films of good quality. There is provided a semiconductor device including a base substrate, a semiconductor layer, and an insulating film each having a corundum crystal structure. Materials having a corundum crystal structure include many types of oxide films capable of functioning as an insulating film. Since all the base substrate, the semiconductor layer, and the insulating film have a corundum crystal structure, it is possible to achieve a semiconductor layer and an insulating film of good quality on the base substrate.