The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2017

Filed:

Feb. 19, 2015
Applicant:

Hitachi High-technologies Corporation, Minato-ku, Tokyo, JP;

Inventors:

Hiromitsu Terauchi, Tokyo, JP;

Tsutomu Iida, Tokyo, JP;

Koichi Yamamoto, Tokyo, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/3213 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32136 (2013.01); H01J 37/32082 (2013.01); H01J 37/3299 (2013.01); H01J 37/32174 (2013.01); H01J 37/32183 (2013.01);
Abstract

A plasma processing apparatus is provided including a processing chamber disposed within a vacuum vessel to form plasma therein, a processing stage disposed in the processing chamber to mount a wafer thereon, a first power supply for outputting an electric field supplied to form the plasma and forming an electric field of a first frequency supplied with repetition of a high output and a low output during processing of the wafer, a second power supply for supplying power of a second frequency to an electrode disposed within the processing stage, and a control device for causing a first value between load impedance at time of the high output of the electric field and load impedance at time of the low output of the electric field to match with impedance of the first power supply.


Find Patent Forward Citations

Loading…