The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2017

Filed:

Apr. 15, 2013
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Lung-En Kuo, Tainan, TW;

Po-Wen Su, Kaohsiung, TW;

Chen-Yi Weng, New Taipei, TW;

Hsuan-Hsu Chen, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/66 (2006.01); H01L 29/66 (2006.01); H01L 21/8238 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3086 (2013.01); H01L 22/12 (2013.01); H01L 22/20 (2013.01); H01L 22/26 (2013.01); H01L 29/66795 (2013.01); H01L 21/31116 (2013.01); H01L 21/823431 (2013.01); H01L 21/823821 (2013.01); H01L 29/785 (2013.01);
Abstract

A sidewall image transfer (SIT) process is provided. First, a substrate is provided. A sacrificial layer having a pattern is formed on the substrate. A first measuring step is performed to measure a width of the pattern of the sacrificial layer. A material layer is formed conformally on the sacrificial layer, wherein a thickness of the material layer is adjusted according to the result of the first measuring step. Then, the material layer is removed anisotropically, so the material layer becomes a spacer on a sidewall of the sacrificial layer. Lastly, the sacrificial layer is removed.


Find Patent Forward Citations

Loading…