The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2017

Filed:

May. 31, 2012
Applicants:

William D. Lee, Newburyport, MA (US);

Steve Drummond, Merrimac, MA (US);

Inventors:

William D. Lee, Newburyport, MA (US);

Steve Drummond, Merrimac, MA (US);

Assignee:

Axcelis Technologies, Inc., Beverly, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/18 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
H01J 37/185 (2013.01); H01J 37/3171 (2013.01); H01J 2237/022 (2013.01); H01J 2237/184 (2013.01); H01J 2237/2001 (2013.01); H01J 2237/31701 (2013.01);
Abstract

An ion implantation system provides ions to a workpiece positioned in a process environment of a process chamber on a sub-ambient temperature chuck. An intermediate chamber having an intermediate environment is in fluid communication with an external environment and has a cooling station and heating station for cooling and heating the workpiece. A load lock chamber is provided between the process chamber and intermediate chamber to isolate the process environment from the intermediate environment. A positive pressure source provides a dry gas within the intermediate chamber at dew point that is less than a dew point of the external environment to the intermediate chamber. The positive pressure source isolates the intermediate environment from the external environment via a flow of the dry gas from the intermediate chamber to the external environment.


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