The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2017

Filed:

Jul. 03, 2016
Applicant:

Jeng-jye Shau, Palo Alto, CA (US);

Inventor:

Jeng-Jye Shau, Palo Alto, CA (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/417 (2006.01); H01L 27/092 (2006.01); H01L 23/528 (2006.01); H01L 29/78 (2006.01); H01L 27/11 (2006.01); G06F 17/50 (2006.01); G11C 5/14 (2006.01);
U.S. Cl.
CPC ...
G11C 11/417 (2013.01); G06F 17/5031 (2013.01); G11C 5/14 (2013.01); H01L 23/528 (2013.01); H01L 27/092 (2013.01); H01L 27/1104 (2013.01); H01L 29/785 (2013.01);
Abstract

Hybrid circuits are CMOS circuits that can function in two different operation modes: a normal operation mode and a power saving mode. At normal operation mode, a hybrid circuit operates in the same ways as typical CMOS circuits. At power saving mode, the standby leakage current of the circuit is reduced significantly. Typically, most parts of a hybrid circuit stay in power saving mode. A circuit block is switched into normal operation mode when it needs to operate at full speed. The resulting circuits are capable of supporting ultra-low power operations without sacrificing performance. Hybrid circuits can be implemented on integrated circuits comprising multiple-gate MOS transistors.


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