The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2017
Filed:
Mar. 16, 2016
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Inventors:
Hao-I Yang, Taipei, TW;
Yi-Tzu Chen, Hsinchu, TW;
Cheng-Jen Chang, Taoyuan, TW;
Geng-Cing Lin, Taipei, TW;
Yu-Hao Hu, Kaohsiung, TW;
Assignee:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/02 (2006.01); G11C 11/417 (2006.01); G11C 5/06 (2006.01); G11C 8/14 (2006.01); H01L 27/11551 (2017.01); G11C 11/412 (2006.01); G11C 11/418 (2006.01);
U.S. Cl.
CPC ...
G11C 11/417 (2013.01); G11C 5/025 (2013.01); G11C 5/063 (2013.01); G11C 8/14 (2013.01); G11C 11/412 (2013.01); G11C 11/418 (2013.01); H01L 27/11551 (2013.01);
Abstract
A semiconductor memory includes a first layer including at least a first memory cell, a second layer including at least a second memory cell, and a wordline shared by the first memory cell and the second memory cell. The first and second memory cells can be above or below the wordline and be coupled to different bit lines.