The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2017

Filed:

Apr. 08, 2015
Applicant:

Sandisk Technologies Inc., Plano, TX (US);

Inventors:

Wenzhou Chen, San Jose, CA (US);

Zhenming Zhou, San Jose, CA (US);

Jun Wan, San Jose, CA (US);

Deepanshu Dutta, San Jose, CA (US);

Yi-Chieh Chen, San Jose, CA (US);

Dana Lee, Saratoga, CA (US);

Assignee:

SanDisk Technologies LLC, Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G06F 11/10 (2006.01); G11C 16/10 (2006.01); G11C 11/56 (2006.01); G11C 16/26 (2006.01); G11C 16/34 (2006.01); G11C 29/02 (2006.01); G11C 16/04 (2006.01); G11C 29/52 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1068 (2013.01); G11C 11/5628 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/26 (2013.01); G11C 16/349 (2013.01); G11C 16/3418 (2013.01); G11C 29/028 (2013.01); G11C 29/52 (2013.01);
Abstract

Techniques for efficiently programming non-volatile storage are disclosed. A second page of data may efficiently be programmed into memory cells that already store a first page. Data may be efficiently transferred from single bit cells to multi-bit cells. Memory cells are read using at least two different read levels. The results are compared to determine a count how many memory cells showed a different result between the two reads. If the count is less than a threshold, then data from the memory cells is stored into a set of data latches without attempting to correct for misreads. If the count is not less than the threshold, then data from the memory cells is stored into the set of data latches with attempting to correct for misreads. A programming operation may be performed based on the data stored in the set of data latches.


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