The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2017

Filed:

Jun. 16, 2014
Applicant:

Bruker Nano, Inc., Santa Barbara, CA (US);

Inventors:

Weijie Wang, Thousand Oaks, CA (US);

Chanmin Su, Ventura, CA (US);

Assignee:

Bruker-Nano, Inc., Santa Barbara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01Q 70/08 (2010.01); G01Q 70/16 (2010.01); G01Q 60/38 (2010.01); G01Q 70/14 (2010.01); G01Q 70/02 (2010.01); G01Q 70/00 (2010.01);
U.S. Cl.
CPC ...
G01Q 60/38 (2013.01); G01Q 70/00 (2013.01); G01Q 70/02 (2013.01); G01Q 70/08 (2013.01); G01Q 70/14 (2013.01); G01Q 70/16 (2013.01);
Abstract

Cantilever probes are formed from a multilayer structure comprising an upper substrate, a lower substrate, an interior layer, a first separation layer, and a second separation layer, wherein the first separation layer is situated between the upper substrate and the interior layer, the second separation layer is situated between the lower substrate and the interior layer, and wherein the first and the second separation layers are differentially etchable with respect to the first and the second substrates, the interior layer. The upper substrate is a first device layer from which a probe tip is formed. The interior layer is a second device layer from which a cantilever arm is formed. The lower substrate is a handle layer from which a handle, or base portion, is formed. Patterning and etching processing of any layer is isolated from the other layers by the separation layers.


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