The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2017

Filed:

Nov. 07, 2012
Applicants:

Hubert M. Bode, Haar, DE;

Weize Chen, Phoenix, AZ (US);

Richard J. DE Souza, Chandler, AZ (US);

Patrice M. Parris, Phoenix, AZ (US);

Inventors:

Hubert M. Bode, Haar, DE;

Weize Chen, Phoenix, AZ (US);

Richard J. De Souza, Chandler, AZ (US);

Patrice M. Parris, Phoenix, AZ (US);

Assignee:

NXP USA, INC., Austin, TX (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/04 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 27/06 (2006.01); H01L 21/761 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 27/04 (2013.01); H01L 21/02381 (2013.01); H01L 21/761 (2013.01); H01L 27/0629 (2013.01); H01L 29/66659 (2013.01); H01L 29/66689 (2013.01); H01L 29/7817 (2013.01); H01L 29/7835 (2013.01); H01L 27/092 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/0869 (2013.01); H01L 29/0878 (2013.01); H01L 29/1083 (2013.01); H01L 29/1095 (2013.01);
Abstract

Embodiments of semiconductor devices and driver circuits include a semiconductor substrate having a first conductivity type, an isolation structure (including a sinker region and a buried layer), an active device within a portion of the substrate contained by the isolation structure, and a resistor circuit. The buried layer is positioned below the top substrate surface, and has a second conductivity type. The sinker region extends between the top substrate surface and the buried layer, and has the second conductivity type. The active device includes a body region, which is separated from the isolation structure by a portion of the semiconductor substrate having the first conductivity type. The resistor circuit is connected between the isolation structure and the body region. The resistor circuit may include one or more resistor networks and, optionally, a Schottky diode and/or one or more PN diode(s) in series and/or parallel with the resistor network(s).


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