The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2017

Filed:

Jun. 30, 2016
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Huiming Bu, Glenmont, NY (US);

Junjun Li, Cupertino, CA (US);

Theodorus E. Standaert, Clifton Park, NY (US);

Tenko Yamashita, Schenectady, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 27/02 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0259 (2013.01); H01L 21/845 (2013.01); H01L 27/0251 (2013.01); H01L 27/0266 (2013.01); H01L 27/1211 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract

Electrostatic discharge (ESD) devices and methods of manufacture are provided. The method includes forming a plurality of fin structures and a mesa structure from semiconductor material. The method further includes forming an epitaxial material with doped regions on the mesa structure and forming gate material over at least the plurality of fin structures. The method further includes planarizing at least the gate material such that the gate material and the epitaxial material are of a same height. The method further includes forming contacts in electrical connection with respective ones of the doped regions of the epitaxial material.


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