The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2017

Filed:

Dec. 01, 2015
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

KeunHee Bai, Suwon-si, KR;

Dohyoung Kim, Hwaseong-si, KR;

Johnsoo Kim, Hwaseong-si, KR;

Heungsik Park, Yongin-si, KR;

Doo-Young Lee, Seoul, KR;

Sanghyun Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 29/51 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/823431 (2013.01); H01L 21/823475 (2013.01); H01L 29/517 (2013.01); H01L 29/66545 (2013.01);
Abstract

A sacrificial layer is formed to cover the gate structures. The sacrificial layer is patterned to form a first opening in the sacrificial layer. A preliminary contact is formed in the first opening and the sacrificial layer is selectively removed. An insulating layer is formed to cover the gate structures and to expose the preliminary contact. The preliminary contact is removed to form a second opening in the insulating layer, and then a contact is formed in the second opening.


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