The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2017
Filed:
Oct. 13, 2011
Gang Chen, San Jose, CA (US);
Sing-chung HU, San Jose, CA (US);
Hsin-chih Tai, San Jose, CA (US);
Duli Mao, Sunnyvale, CA (US);
Manoj Bikumandla, San Jose, CA (US);
Wei Zheng, Los Gatos, CA (US);
Yin Qian, Milpitas, CA (US);
Zhibin Xiong, Santa Clara, CA (US);
Vincent Venezia, Los Gatos, CA (US);
Keh-chiang Ku, Cupertino, CA (US);
Howard E. Rhodes, San Martin, CA (US);
Gang Chen, San Jose, CA (US);
Sing-Chung Hu, San Jose, CA (US);
Hsin-Chih Tai, San Jose, CA (US);
Duli Mao, Sunnyvale, CA (US);
Manoj Bikumandla, San Jose, CA (US);
Wei Zheng, Los Gatos, CA (US);
Yin Qian, Milpitas, CA (US);
Zhibin Xiong, Santa Clara, CA (US);
Vincent Venezia, Los Gatos, CA (US);
Keh-Chiang Ku, Cupertino, CA (US);
Howard E. Rhodes, San Martin, CA (US);
OmniVision Technologies, Inc., Santa Clara, CA (US);
Abstract
Embodiments of an image sensor pixel that includes a photosensitive element, a floating diffusion region, and a transfer device. The photosensitive element is disposed in a substrate layer for accumulating an image charge in response to light. The floating diffusion region is dispose in the substrate layer to receive the image charge from the photosensitive element. The transfer device is disposed between the photosensitive element and the floating diffusion region to selectively transfer the image charge from the photosensitive element to the floating diffusion region. The transfer device includes a buried channel device including a buried channel gate disposed over a buried channel dopant region. The transfer device also includes a surface channel device including a surface channel gate disposed over a surface channel region. The surface channel device is in series with the buried channel device. The surface channel gate has the opposite polarity of the buried channel gate.