The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2017

Filed:

Feb. 28, 2013
Applicant:

Veeco Precision Surface Processing Llc, Horsham, PA (US);

Inventors:

Laura Mauer, South Kent, CT (US);

Elena Lawrence, East Norriton, PA (US);

John Taddei, Breinigsville, PA (US);

Ramey Youssef, Horsham, PA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); C23F 1/00 (2006.01); C03C 15/00 (2006.01); C03C 25/68 (2006.01); H01L 21/66 (2006.01); G01N 21/55 (2014.01); G06F 17/50 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); G01N 21/55 (2013.01); G06F 17/50 (2013.01); H01L 21/6708 (2013.01); H01L 21/67046 (2013.01); H01L 21/67051 (2013.01); H01L 21/67253 (2013.01); H01L 22/26 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A system and method for performing a wet etching process is disclosed. The system includes multiple processing stations accessible by a transfer device, including a measuring station to optically measure the thickness of a substrate, a controller to calculate an etch recipe for the substrate, in real time, and cause a single wafer wet etching station to etch the substrate according to the recipe. In addition, the system can measure the after etch thickness and calculate etch recipes, in real time, as a function of the final measurements of a previous substrate. The system can also include an in situ end point detection device for detecting the TSV reveal point while etching TSVs substrates. The system provides an automated solution to adjust etch recipe parameters in real time according to feedback concerning previously etched wafers and precisely control the TSV reveal height and etch duration using end point detection.


Find Patent Forward Citations

Loading…