The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2017
Filed:
Apr. 15, 2015
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 21/265 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823842 (2013.01); H01L 21/26513 (2013.01); H01L 21/82385 (2013.01); H01L 21/823821 (2013.01); H01L 27/0922 (2013.01); H01L 27/0924 (2013.01); H01L 29/66537 (2013.01); H01L 29/66545 (2013.01);
Abstract
The present invention provides a semiconductor device and a method of forming the same. The semiconductor device includes a substrate, a first transistor and a second transistor. The first transistor and the second transistor are disposed on the substrate. The first transistor includes a first channel and a first work function layer. The second transistor includes a second channel and a second work function layer, where the first channel and the second channel include different dopants, and the second work function layer and the first work function layer have a same conductive type and different thicknesses.