The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2017
Filed:
Oct. 06, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/308 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); H01L 21/0206 (2013.01); H01L 21/3083 (2013.01); H01L 21/30604 (2013.01); H01L 21/31051 (2013.01); H01L 21/31111 (2013.01); H01L 21/76224 (2013.01); H01L 29/6653 (2013.01); H01L 29/66795 (2013.01); H01L 29/66818 (2013.01); H01L 29/785 (2013.01); H01L 29/7851 (2013.01); H01L 29/7853 (2013.01); H01L 29/7854 (2013.01);
Abstract
A method includes etching a semiconductor substrate to form a semiconductor strip and trenches on opposite sidewalls of the semiconductor strip. A spacer is formed on a sidewall of the semiconductor strip which is used as an etching mask to extend the trenches down into the semiconductor substrate. A dielectric material is filled into the trenches and then planarized to form insulation regions in the trenches. The insulation regions are recessed. After the recessing, top surfaces of the insulation regions are lower than a top surface of the semiconductor strip and a gate structure may be formed thereon.