The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2017
Filed:
Jan. 05, 2011
Chun-fai Cheng, Tin Shui Wai, HK;
Ka-hing Fung, Hsinchu, TW;
Li-ping Huang, Taipei, TW;
Wei-yuan LU, Taipei, TW;
Chun-Fai Cheng, Tin Shui Wai, HK;
Ka-Hing Fung, Hsinchu, TW;
Li-Ping Huang, Taipei, TW;
Wei-Yuan Lu, Taipei, TW;
Abstract
In a p-type field effect transistor, a pair of spacers are formed over the top surface of a substrate. A channel recess cavity includes an indentation in the substrate top surface between the pair of spacers. A gate stack has a bottom portion in the channel recess cavity and a top portion extending outside the channel recess cavity. A source/drain (S/D) recess cavity has a bottom surface and sidewalls below the substrate top surface. The S/D recess cavity has a portion extending below the gate stack. A strained material is filled the S/D recess cavity.