The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2017
Filed:
Oct. 20, 2015
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Genji Nakamura, Kai, JP;
Toshio Hasegawa, Kai, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01); H01L 29/49 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28088 (2013.01); H01L 21/32137 (2013.01); H01L 21/32139 (2013.01); H01L 21/823842 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/513 (2013.01);
Abstract
A method of forming a semiconductor device is disclosed in various embodiments. The method includes providing a substrate containing first and second device regions, and a high-k film on the substrate, depositing a metal nitride gate electrode film on the high-k film, forming a metal-containing gate electrode film on the metal nitride gate electrode film in the second device region but not in the first device region, and depositing a Si-based cap layer on the metal-containing gate electrode film in the second device region and on the metal nitride gate electrode film in the first device region.