The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2017
Filed:
Oct. 28, 2013
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Berangere Hyot, Eybens, FR;
Benoit Amstatt, Grenoble, FR;
Marie-Francoise Armand, Vaulnaveys-le-Haut, FR;
Abstract
The process for growing at least one semiconductor nanowire (), said growth process comprising a step of forming, on a substrate (), a nucleation layer () for the growth of the nanowire () and a step of growth of the nanowire (). The step of formation of the nucleation layer () comprises the following steps: deposition onto the substrate () of a layer of a transition metal () chosen from Ti, V, Cr, Zr, Nb, Mo, Hf, Ta; nitridation of at least a part () of the transition metal layer so as to form a transition metal nitride layer having a surface intended for growing the nanowire ().