The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2017
Filed:
Feb. 26, 2015
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Cheng-Ta Wu, Chiayi County, TW;
Tsung Han Wu, Tainan, TW;
Yao-Wen Hsu, New Taipei, TW;
Lun-Kuang Tan, Hsinchu, TW;
Wei-Ming You, Taipei, TW;
Ting-Chun Wang, Tainan, TW;
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Abstract
The present disclosure provides a method for generating a parameter pattern including: performing a plurality of measurements upon a plurality of regions on a surface of a workpiece to obtain a plurality of measured results; and deriving a parameter pattern according to the plurality of measured results by a computer; wherein the parameter pattern includes a plurality of regional parameter values corresponding to each of the plurality of regions on the surface of the workpiece. The present disclosure provides a Feed Forward semiconductor manufacturing method including: forming a layer with a desired pattern on a surface of a workpiece; deriving a control signal including a parameter pattern according to spatial dimension measurements against the layer with the desired pattern distributed over a plurality of regions of the surface of the workpiece; and performing an ion implantation on the surface of the workpiece according to the control signal.