The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2017

Filed:

Nov. 02, 2016
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventor:

Bharath Upputuri, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/02 (2006.01); G11C 11/419 (2006.01); G11C 11/418 (2006.01);
U.S. Cl.
CPC ...
G11C 11/419 (2013.01); G11C 11/418 (2013.01);
Abstract

A sense amplifier circuit includes a power node having a power node voltage at a power voltage level, a bit line having a bit line voltage, a sense amplifier output, an NMOS transistor and a PMOS transistor coupled in series between the power node and the bit line, and a logic gate configured to generate a sense amplifier output voltage at the sense amplifier output based on the bit line voltage. The NMOS transistor is configured to operate in a sub-threshold region to maintain the bit line voltage at a first level and operate in a region above the sub-threshold region to maintain the bit line voltage at a second level, and the first level is between the second level and the power voltage level.


Find Patent Forward Citations

Loading…