The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 04, 2017
Filed:
Apr. 25, 2013
Tsuyoshi Ohtsuki, Gunma, JP;
Tsuyoshi Ohtsuki, Gunma, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
On an EP substrate, an EP layerhaving a conductivity type different from that of the EP substrateis grown. With ion implantation, a wellhaving the same conductivity type as the EP layeris formed, and a channel stop layeris also formed. A dopant having a conductivity type different from that of the wellis diffused in the wellto form a pn junctionin the well. A plurality of cellseach having the diffusion layeras one electrode and a rear surfaceas the other electrode are formed as a TEG. Using the TEG, junction leakage currents from two depletion layers, a depletion layerin the well and a depletion layerat an interface between the EP layerand the EP substrate, are measured.