The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 04, 2017

Filed:

Aug. 06, 2015
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Michael W. Stowell, Loveland, CO (US);

Yongmei Chen, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/34 (2006.01); C23C 14/35 (2006.01); H01L 21/02 (2006.01); C23C 14/06 (2006.01); C23C 16/27 (2006.01); C23C 16/50 (2006.01);
U.S. Cl.
CPC ...
C23C 14/35 (2013.01); C23C 14/0611 (2013.01); C23C 16/272 (2013.01); C23C 16/50 (2013.01); H01L 21/02115 (2013.01); H01L 21/02266 (2013.01);
Abstract

Methods for depositing a nanocrystalline diamond layer are disclosed herein. The method can include delivering a sputter gas to a substrate positioned in a processing region of a first process chamber, the first process chamber having a carbon-containing sputter target, delivering an energy pulse to the sputter gas to create a sputtering plasma, the sputtering plasma having a sputtering duration, the energy pulse having an average power between 1 W/cmand 10 W/cmand a pulse width which is less than 100 μs and greater than 30 μs, the sputtering plasma being controlled by a magnetic field, the magnetic field being less than 300. Gauss, and delivering the sputtering plasma to the sputter target to form an ionized species, the ionized species forming a crystalline carbon-containing layer on the substrate.


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