The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Dec. 12, 2013
Gan Systems Inc., Ottawa, CA;
John Roberts, Kanata, CA;
Greg P. Klowak, Ottawa, CA;
GaN Systems Inc., Ottawa, CA;
Abstract
An electronic switching system and device comprising driver circuits for power transistors are disclosed, with particular application for MOSFET driven, normally-on gallium nitride (GaN) power transistors. Preferably, a low power, high speed CMOS driver circuit with an integrated low voltage, lateral MOSFET driver is series coupled, in a hybrid cascode arrangement, to a high voltage GaN HEMT and provides for improved control of noise and voltage transients. Monitoring and control functions, including latching and clamping, are based on monitoring of Vconditions for shut-down and start-up conditioning to enable safer operation, particularly for high voltage and high current switching. Preferred embodiments also provide isolated, self-powered, high speed driver devices, with reduced input losses.