The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Oct. 02, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Wen-Jiun Shen, Yunlin County, TW;
Chia-Jong Liu, Ping-Tung County, TW;
Chung-Fu Chang, Tainan, TW;
Yen-Liang Wu, Taipei, TW;
Man-Ling Lu, Taoyuan, TW;
I-Fan Chang, Hsinchu, TW;
Yi-Wei Chen, Taichung, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor device includes a substrate, a gate structure, a sidewall spacer, and an epitaxial layer. The gate structure is disposed on the substrate, and the substrate has at least one recess disposed adjacent to the gate structure. The sidewall spacer is disposed on at least two sides of the gate structure. The sidewall spacer includes a first spacer layer and a second spacer layer, and the first spacer layer is disposed between the gate structure and the second spacer layer. The epitaxial layer is disposed in the recess, and the recess is a circular shaped recess. A distance between an upmost part of the recess and the gate structure is less than a width of the sidewall spacer.