The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Feb. 17, 2012
Zhen-yu LI, Zhuqi Township, Chiayi County, TW;
Hsing-kuo Hsia, Jhubei, TW;
Hao-chung Kuo, Tsu-Bai, TW;
Zhen-Yu Li, Zhuqi Township, Chiayi County, TW;
Hsing-Kuo Hsia, Jhubei, TW;
Hao-Chung Kuo, Tsu-Bai, TW;
Epistar Corporation, Hsinchu, TW;
Abstract
The present disclosure involves a method of fabricating a semiconductor device. A surface of a silicon wafer is cleaned. A first buffer layer is then epitaxially grown on the silicon wafer. The first buffer layer contains an aluminum nitride (AlN) material. A second buffer layer is then epitaxially grown on the first buffer layer. The second buffer layer includes a plurality of aluminum gallium nitride (AlGaN) sub-layers. Each of the sub-layers has a respective value for x that is between 0 and 1. A value of x for each sub-layer is a function of its position within the second buffer layer. A first gallium nitride (GaN) layer is epitaxially grown over the second buffer layer. A third buffer layer is then epitaxially grown over the first GaN layer. A second GaN layer is then epitaxially grown over the third buffer layer.