The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Dec. 14, 2012
Applicant:
Institute of Microelectronics, Chinese Academy of Sciences, Beijing, CN;
Inventors:
Huilong Zhu, Poughkeepsie, NY (US);
Miao Xu, Beijing, CN;
Jun Luo, Beijing, CN;
Chunlong Li, Beijing, CN;
Guilei Wang, Beijing, CN;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/84 (2006.01); H01L 21/306 (2006.01); H01L 21/8234 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30625 (2013.01); H01L 21/31053 (2013.01); H01L 21/31105 (2013.01); H01L 21/823431 (2013.01); H01L 21/845 (2013.01); H01L 29/1054 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01);
Abstract
Provided is a method for manufacturing a fin structure. The method may include forming an initial fin on a substrate, forming a dielectric layer on the substrate to cover the initial fin, planarizing the dielectric layer by sputtering, and further etching the dielectric layer back to expose a portion of the initial fin, wherein the exposed portion serves as a fin.