The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Jan. 07, 2016
Applicant:
G-force Nanotech Ltd., Kaohsiung, TW;
Inventors:
Chao-Hui Yeh, Hsinchu, TW;
Jen-Kuan Chiu, Hsinchu, TW;
Assignee:
G-FORCE NANOTECH LTD., Kaohsiung, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/02 (2006.01); C23C 16/48 (2006.01); C23C 16/30 (2006.01); C23C 16/46 (2006.01); H01J 37/32 (2006.01); C30B 25/10 (2006.01); C30B 29/46 (2006.01); C30B 29/60 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02568 (2013.01); C23C 16/305 (2013.01); C23C 16/46 (2013.01); C23C 16/48 (2013.01); C30B 25/105 (2013.01); C30B 29/46 (2013.01); C30B 29/60 (2013.01); H01J 37/32321 (2013.01); H01L 21/0262 (2013.01);
Abstract
A method and apparatus for fabricating two-dimensional layered chalcogenide film are provided. A catalyst gas, a metal-based precursor gas and a chalcogen-based precursor gas are ionized with external stimuli to generate energetic particles which facilitate a chalcogen-substitution reaction of a metal-based precursor gas in a reaction chamber to form uniform two-dimensional layered chalcogenide film of at least a single crystalline layer via chemical vapor deposition.