The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Jul. 08, 2015
Hitachi Kokusai Electric Inc., Tokyo, JP;
Yoshitomo Hashimoto, Toyama, JP;
Yoshiro Hirose, Toyama, JP;
Katsuyoshi Harada, Toyama, JP;
Yoshinobu Nakamura, Toyama, JP;
Ryota Sasajima, Toyama, JP;
Hitachi Kokusai Electric, Inc., Tokyo, JP;
Abstract
There is provided a method of manufacturing a semiconductor device, including pre-treating a surface of an insulating film formed on a substrate by supplying a precursor containing a first element and a halogen element to the substrate; and forming a film containing the first element and a second element on the pre-treated surface of the insulating film by performing a cycle a predetermined number of times, the cycle including supplying the precursor to the substrate; and supplying a reactant containing the second element to the substrate, wherein the act of supplying the precursor and the act of supplying the reactant are performed non-simultaneously.