The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2017

Filed:

May. 11, 2011
Applicants:

Soichi Kumon, Matsusaka, JP;

Takashi Saio, Suzuka, JP;

Shinobu Arata, Matsusaka, JP;

Masanori Saito, Matsusaka, JP;

Atsushi Ryokawa, Ube, JP;

Shuhei Yamada, Ube, JP;

Hidehisa Nanai, Tokyo, JP;

Yoshinori Akamatsu, Matsusaka, JP;

Inventors:

Soichi Kumon, Matsusaka, JP;

Takashi Saio, Suzuka, JP;

Shinobu Arata, Matsusaka, JP;

Masanori Saito, Matsusaka, JP;

Atsushi Ryokawa, Ube, JP;

Shuhei Yamada, Ube, JP;

Hidehisa Nanai, Tokyo, JP;

Yoshinori Akamatsu, Matsusaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/02 (2006.01); H01L 21/3105 (2006.01); C09D 183/08 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02057 (2013.01); C09D 183/08 (2013.01); H01L 21/0206 (2013.01); H01L 21/302 (2013.01); H01L 21/3105 (2013.01);
Abstract

Disclosed is a liquid chemical for forming a water repellent protective film on a wafer that has at its surface a finely uneven pattern and contains silicon element at least at a part of the uneven pattern, the water repellent protective film being formed at least on surfaces of recessed portions of the uneven pattern at the time of cleaning the wafer. The liquid chemical contains: a silicon compound (A) represented by the general formula RSi(H)(X)and an acid; or a silicon compound (C) represented by the general formula RSi(H)(CH)(Z)and a base that contains no more than 35 mass % of water. The total amount of water in the liquid chemical is no greater than 1000 mass ppm relative to the total amount of the liquid chemical. The liquid chemical can improve a cleaning step that easily induces pattern collapse.


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