The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2017

Filed:

May. 24, 2013
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Wen-Zhan Zhou, Zhubei, TW;

Heng-Jen Lee, Baoshan Township, TW;

Yen-Liang Chen, Zhubei, TW;

Kai-Hsiung Chen, New Taipei, TW;

Chih-Ming Ke, Hsinchu, TW;

Ho-Yung David Hwang, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 7/70641 (2013.01); G03F 7/70558 (2013.01);
Abstract

A method for controlling semiconductor production through use of a hybrid Focus Exposure Matrix (FEM) model includes taking measurements of a set of structures formed onto a substrate. The method further includes using a FEM model to determine focus and exposure conditions used to form the structure The model was created through use of measurements of structures formed on a substrate under varying focus and exposure conditions, the measurements being taken using both an optical measurement tool and a scanning electron microscope.


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