The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 27, 2017
Filed:
Feb. 11, 2015
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventor:
Hidetami Yaegashi, Tokyo, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Primary Examiner:
Int. Cl.
CPC ...
G03D 5/00 (2006.01); G03D 13/00 (2006.01); G03F 7/039 (2006.01); G03F 7/30 (2006.01); G03F 7/40 (2006.01); H01L 21/67 (2006.01);
U.S. Cl.
CPC ...
G03D 13/00 (2013.01); G03F 7/039 (2013.01); G03F 7/3021 (2013.01); G03F 7/405 (2013.01); H01L 21/6715 (2013.01); H01L 21/67115 (2013.01); H01L 21/67178 (2013.01);
Abstract
A substrate processing method performs a photolithography processing on a wafer to form a resist pattern on the wafer. Ultraviolet ray is irradiated onto the resist pattern to cut side chains of the resist pattern to improve line edge roughness of the resist pattern. A processing agent is caused to enter the resist pattern and a metal is caused to be infiltrated into the resist pattern through the processing agent. Thereafter, the wafer is heated to vaporize the processing agent from the resist pattern to form a cured resist pattern.