The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2017

Filed:

Aug. 31, 2015
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Hyung Wook Noh, Anyang, KR;

Seung Woo Choi, Cheonan, KR;

Dong Seok Kang, Cheonan, KR;

Assignee:

ASM IP HOLDING B.V., Almere, NL;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/26 (2006.01); C23C 16/455 (2006.01); G02B 1/111 (2015.01); C23C 16/44 (2006.01); C23C 16/50 (2006.01);
U.S. Cl.
CPC ...
C23C 16/26 (2013.01); C23C 16/45536 (2013.01); C23C 16/45542 (2013.01); C23C 16/45553 (2013.01); G02B 1/111 (2013.01); C23C 16/4408 (2013.01); C23C 16/45523 (2013.01); C23C 16/45525 (2013.01); C23C 16/50 (2013.01);
Abstract

A method of depositing a thin film includes: supplying a first source gas to a reactor during a first time period; supplying a purge gas to the reactor during a second time period; supplying a second source gas to the reactor during a third time period; and supplying the purge gas to the reactor during a fourth time period, wherein the first source gas and the second source gas comprise polymer precursors, and wherein the first source gas and the second source gas are supplied at a temperature that is less than 100° C. or about 100° C. According to the method, uniformity and step coverage of a thin film can be improved by depositing an amorphous carbon layer using polymer precursors according to an Atomic layer deposition (ALD) method.


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