The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2017

Filed:

May. 13, 2013
Applicant:

Shin-etsu Chemical Co., Ltd., Chiyoda-ku, JP;

Inventors:

Hiroki Yoshikawa, Niigata, JP;

Souichi Fukaya, Niigata, JP;

Yukio Inazuki, Niigata, JP;

Hideo Nakagawa, Niigata, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/06 (2006.01); C23C 14/08 (2006.01); C23C 14/34 (2006.01); C23C 14/35 (2006.01); H01J 37/34 (2006.01); G03F 1/00 (2012.01); G03F 1/50 (2012.01); G03F 7/20 (2006.01); G03F 1/46 (2012.01); G03F 1/54 (2012.01); G03F 1/80 (2012.01); C23C 14/18 (2006.01);
U.S. Cl.
CPC ...
C23C 14/0641 (2013.01); C23C 14/0676 (2013.01); C23C 14/3407 (2013.01); C23C 14/3464 (2013.01); C23C 14/352 (2013.01); G03F 1/00 (2013.01); G03F 1/46 (2013.01); G03F 1/50 (2013.01); G03F 1/54 (2013.01); G03F 1/80 (2013.01); G03F 7/20 (2013.01); H01J 37/34 (2013.01); H01J 37/3426 (2013.01); H01J 37/3429 (2013.01); C23C 14/083 (2013.01); C23C 14/086 (2013.01); C23C 14/185 (2013.01);
Abstract

The method for manufacturing a photomask blank according to the present invention, when manufacturing a photomask blank having at least one functional layer on a transparent substrate, in a step of film-formation of such a functional film where the functional film includes a chromium-containing element and an a metallic element that is capable of bringing a mixture of the metallic element and the chromium into a liquid phase at a temperature of 400° C. or lower, a chromium target (target A) and a target (target B) mainly containing at least one kind of the metallic element are simultaneously sputtered (co-sputtered). The present invention provides a technique for manufacturing a functional film having a small variation in its characteristics such as optical density and a low detect, and showing a high etching rate.


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