The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Oct. 07, 2016
Applicant:
National Sun Yat-sen University, Kaohsiung, TW;
Inventors:
Ting-Chang Chang, Kaohsiung, TW;
Kuan-Chang Chang, Kaohsiung, TW;
Tsung-Ming Tsai, Kaohsiung, TW;
Tian-Jian Chu, Kaohsiung, TW;
Chih-Hung Pan, Kaohsiung, TW;
Assignee:
NATIONAL SUN YAT-SEN UNIVERSITY, Kaohsiung, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/16 (2006.01); H01L 21/20 (2006.01); G11C 11/00 (2006.01); H01L 45/00 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1625 (2013.01); H01L 21/02266 (2013.01); H01L 45/08 (2013.01); H01L 45/1233 (2013.01); H01L 45/1253 (2013.01); H01L 45/14 (2013.01); H01L 45/145 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/1641 (2013.01);
Abstract
A method for producing a resistive random access memory includes preparing a first metal layer and sputtering a resistive switching layer on the first metal layer. Surface treatment is conducted on the resistive switching layer by using a plasma containing mobile ions to dope the mobile ions into the resistive switching layer. The polarity of the mobile ions is opposite to the polarity of oxygen ions. Then, a second metal layer is sputtered on the resistive switching layer.