The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2017

Filed:

Jun. 02, 2016
Applicant:

Sumitomo Chemical Company, Limited, Chuo-ku, Tokyo, JP;

Inventors:

Fumimasa Horikiri, Nagareyama, JP;

Kenji Shibata, Tsukuba, JP;

Kazufumi Suenaga, Tsuchiura, JP;

Kazutoshi Watanabe, Tsuchiura, JP;

Masaki Noguchi, Tsuchiura, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 41/332 (2013.01); H01L 41/187 (2006.01); H01L 41/08 (2006.01); H01L 41/316 (2013.01); H01L 41/314 (2013.01);
U.S. Cl.
CPC ...
H01L 41/1873 (2013.01); H01L 41/0805 (2013.01); H01L 41/314 (2013.01); H01L 41/316 (2013.01); H01L 41/332 (2013.01);
Abstract

There is provided a method for manufacturing a niobate-system ferroelectric thin film device, including: a lower electrode film formation step of forming a lower electrode film on a substrate; a niobate-system ferroelectric thin film formation step of forming a niobate-system ferroelectric thin film on the lower electrode film; an etch mask formation step of forming a desired etch mask pattern on the niobate-system ferroelectric thin film; and a ferroelectric thin film etching step of forming a desired fine pattern of the niobate-system ferroelectric thin film by wet etching using an etchant including an aqueous alkaline solution of a chelating agent.


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