The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Dec. 30, 2014
Applicant:
Snaptrack, Inc., San Diego, CA (US);
Inventors:
Kenji Nomura, San Jose, CA (US);
John Hyunchul Hong, San Clemente, CA (US);
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/786 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01); C23C 16/455 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66969 (2013.01); C23C 16/45531 (2013.01); H01L 21/0262 (2013.01); H01L 21/02422 (2013.01); H01L 21/02535 (2013.01); H01L 21/02565 (2013.01); H01L 27/1225 (2013.01); H01L 29/7869 (2013.01); C23C 16/407 (2013.01); C23C 16/45534 (2013.01);
Abstract
Provided herein are methods of depositing p-type metal oxide thin films by atomic layer deposition (ALD). Also provided are p-type metal oxide thin films and TFTs including p-type metal oxide channels. In some implementations, the p-type metal oxide thin films have a metal and oxygen vacancy defect density of less than 10/cm. The p-type metal oxide thin films may be electrically active throughout the entire thicknesses of the thin films.