The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Jun. 22, 2016
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Deepak Nayak, Fremont, CA (US);
Zoran Krivokapic, Santa Clara, CA (US);
Srinivasa Banna, San Jose, CA (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 29/66 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66522 (2013.01); H01L 21/76867 (2013.01); H01L 23/53271 (2013.01); H01L 29/6656 (2013.01); H01L 29/66795 (2013.01);
Abstract
Methods for creating barrier layers in a III-V electron channel to reduce band-to-band leakage current and the resulting devices are disclosed. Embodiments include forming a fin channel portion comprising a III-V material, on a barrier layer; forming undoped InP semiconductor spacers at opposite ends of the fin channel portion on the barrier layer; forming S/D regions adjacent the undoped InP semiconductor spacers on the barrier layer; and forming a high-k/metal gate over the fin channel portion and undoped InP semiconductor spacers.