The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Mar. 12, 2015
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Shunpei Yamazaki, Tokyo, JP;
Yutaka Shionoiri, Kanagawa, JP;
Tomoaki Atsumi, Kanagawa, JP;
Shuhei Nagatsuka, Kanagawa, JP;
Yutaka Okazaki, Kanagawa, JP;
Suguru Hondo, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Abstract
A semiconductor device with a transistor having favorable electrical characteristics is provided. The semiconductor device has a memory circuit and a circuit that are over the same substrate. The memory circuit includes a capacitor, a first transistor, and a second transistor. A gate of the first transistor is electrically connected to the capacitor and one of a source and a drain of the second transistor. The circuit includes a third transistor and a fourth transistor that are electrically connected to each other in series. The first transistor and the third transistor each include an active layer including silicon, and the second transistor and the fourth transistor each include an active layer including an oxide semiconductor.