The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2017

Filed:

Mar. 10, 2016
Applicant:

Crossbar, Inc., Santa Clara, CA (US);

Inventors:

Hagop Nazarian, San Jose, CA (US);

Sung Hyun Jo, Sunnyvale, CA (US);

Harry Yue Gee, Milpitas, CA (US);

Assignee:

CROSSBAR, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01); G11C 14/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2436 (2013.01); G11C 13/003 (2013.01); G11C 13/004 (2013.01); G11C 13/0069 (2013.01); G11C 14/00 (2013.01); G11C 14/0045 (2013.01); H01L 45/145 (2013.01); H01L 45/16 (2013.01); G11C 2213/53 (2013.01); G11C 2213/79 (2013.01);
Abstract

A circuit operable as a non-volatile memory cell, formed in part from a volatile selection device, is provided. The circuit can be fabricated utilizing Integrated Circuit (IC)-Foundry compatible processes to simplify manufacturing, reduce cost and improve yield. For instance, the circuit can comprise a set of transistors fabricated at least in part with front-end-of-line IC processes, and can comprise the volatile selection device and a set of interconnects fabricated at least in part with back-end-of-line IC processes. In further embodiments, the volatile selection device can be a two-terminal, volatile resistive-switching device connected at one end to a gate of an n-well transistor, and connected at a second end to a gate of a p-well transistor.


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