The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2017

Filed:

Feb. 23, 2016
Applicants:

Stmicroelectronics SA, Montrouge, FR;

Stmicroelectronics (Crolles 2) Sas, Crolles, FR;

Inventors:

Axel Crocherie, Grenoble, FR;

Michel Marty, Saint Paul de Varces, FR;

Jean-Luc Huguenin, Grenoble, FR;

Sébastien Jouan, Crolles, FR;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/113 (2006.01); H01L 27/146 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 27/14621 (2013.01); H01L 27/14629 (2013.01); H01L 29/66977 (2013.01);
Abstract

An integrated image sensor may include adjacent pixels, with each pixel including an active semiconductor region including a photodiode, an antireflection layer above the photodiode, a dielectric region above the antireflection layer and an optical filter to pass incident luminous radiation having a given wavelength. The antireflection layer may include an array of pads mutually separated by a dielectric material of the dielectric region. The array may be configured to allow simultaneous transmission of the incident luminous radiation and a diffraction of the incident luminous radiation producing diffracted radiations which have wavelengths below that of the incident radiation, and are attenuated with respect to the incident radiation.


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