The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Jun. 16, 2016
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Assignee:
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 21/66 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 21/8238 (2006.01); G01R 31/26 (2014.01); G01R 31/28 (2006.01);
U.S. Cl.
CPC ...
H01L 22/34 (2013.01); G01R 31/2644 (2013.01); G01R 31/2884 (2013.01); H01L 21/823878 (2013.01); H01L 21/823892 (2013.01); H01L 22/30 (2013.01); H01L 27/0928 (2013.01); H01L 29/0653 (2013.01);
Abstract
A test key and a method for checking the window of a doped region using the test key are provided in the present invention. The test key includes a P-type first well region on a substrate, a P-type substrate region adjacent to the first well region, a N-type first doped region partially overlapping the first well region, two P-type second doped regions at two opposite sides of the first well region, a N-type second well region surrounding the first doped region, the substrate region and the two second doped regions, and a plurality of test pads above the above-identified region.