The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 20, 2017

Filed:

Apr. 05, 2013
Applicant:

Novellus Systems, Inc., Fremont, CA (US);

Inventors:

Kousik Ganesan, Tualatin, OR (US);

Shantinath Ghongadi, Tilgard, OR (US);

Tariq Majid, Wilsonville, OR (US);

Aaron Labrie, Oregon City, OR (US);

Steven T. Mayer, Aurora, OR (US);

Assignee:

Novellus Systems, Inc., Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/02 (2006.01); H01L 21/3213 (2006.01); H01L 21/677 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6708 (2013.01); H01L 21/0209 (2013.01); H01L 21/02068 (2013.01); H01L 21/02087 (2013.01); H01L 21/32134 (2013.01); H01L 21/67745 (2013.01); H01L 21/68735 (2013.01); H01L 21/68785 (2013.01);
Abstract

Chemical etching methods and associated modules for performing the removal of metal from the edge bevel region of a semiconductor wafer are described. The methods and systems provide the thin layer of pre-rinsing liquid before applying etchant at the edge bevel region of the wafer. The etchant is less diluted and diffuses faster through a thinned layer of rinsing liquid. An edge bevel removal embodiment involving that is particularly effective at reducing process time, narrowing the metal taper and allowing for subsequent chemical mechanical polishing, is disclosed.


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