The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 20, 2017
Filed:
Aug. 08, 2016
Kabushiki Kaisha Toshiba, Tokyo, JP;
Ayako Kawanishi, Yokohama Kanagawa, JP;
Yusuke Kasahara, Yokohama Kanagawa, JP;
Hiroki Yonemitsu, Chigasaki Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device manufacturing method includes forming a first film on a substrate having a first region and a second region. A second film is formed on the first film. Guide grooves are formed by removing portions of the second film and exposing the first film. A self-assembly material is coated on the exposed first film and heated to cause a phase separation into a first and a second phase section. The self-assembly material is irradiated. A mask pattern including at least a portion of the first phase section is formed by removing the second phase section. The mask pattern has a first dimension in the first region and a second dimension in the second region that is different from the first dimension. The first film is etched after the mask pattern is formed.