The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 13, 2017
Filed:
Oct. 28, 2013
Applicant:
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Inventors:
Berangere Hyot, Eybens, FR;
Benoit Amstatt, Grenoble, FR;
Marie-Francoise Armand, Vaulnaveys-le-Haut, FR;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/12 (2010.01); H01L 29/06 (2006.01); H01L 21/02 (2006.01); H01L 33/04 (2010.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); C30B 25/00 (2006.01); C30B 25/18 (2006.01); C30B 29/16 (2006.01); C30B 29/36 (2006.01); C30B 29/40 (2006.01); C30B 29/60 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/41 (2006.01); H01L 33/16 (2010.01); B82Y 99/00 (2011.01); H01L 33/24 (2010.01);
U.S. Cl.
CPC ...
H01L 29/0676 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); C30B 25/005 (2013.01); C30B 25/183 (2013.01); C30B 29/16 (2013.01); C30B 29/36 (2013.01); C30B 29/40 (2013.01); C30B 29/406 (2013.01); C30B 29/605 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02104 (2013.01); H01L 21/02381 (2013.01); H01L 21/02389 (2013.01); H01L 21/02439 (2013.01); H01L 21/02458 (2013.01); H01L 21/02603 (2013.01); H01L 29/401 (2013.01); H01L 29/413 (2013.01); H01L 29/6609 (2013.01); H01L 33/04 (2013.01); H01L 33/12 (2013.01); H01L 33/16 (2013.01); B82Y 99/00 (2013.01); H01L 33/24 (2013.01); Y10S 977/762 (2013.01); Y10S 977/84 (2013.01); Y10S 977/932 (2013.01);
Abstract
The electronic device comprises a substrate (), at least one semiconductor nanowire () and a buffer layer () interposed between the substrate () and said nanowire (). The buffer layer () is at least partly formed by a transition metal nitride layer () from which extends the nanowire (), said transition metal nitride being chosen from: vanadium nitride, chromium nitride, zirconium nitride, niobium nitride, molybdenum nitride, hafnium nitride or tantalum nitride.